In this paper, AlGaInN LED chips intended for production of high-power efficiency white LEDs are considered. The main designs of light-emitting chips as well as basic stages of chip fabrication are given. The key problems both of chip designing and of reflective ohmic contacts and mesastructure formation processing are discussed. The ways allowing us to overcome these problems are suggested. The main electrical and optical parameters of the developed LEDs are considered.
Keywords: AlGaInN heterostructures, LEDs, flip-chip design, reflective contacts, ITO nanodimensional layers